Silicon substrate LED technology won the first prize of the national technology invention three routes will reshape the LED industry
According to the December 22 news, the sapphire substrate technology with the three major technical routes of LED substrate technology has won the 2014 Nobel Prize in Physics. Some industrial economists said that in the context of falling costs, the silicon substrate technology is expected to be reshaped if it can be highly sought after.
On the 16th, the State Council executive meeting passed the 2015 National Science and Technology Awards. According to the previous preliminary evaluation and historical experience, the 2015 National Technology Invention First Prize is expected to be captured by the “silicon substrate high-efficiency GaN-based blue light-emitting diodeâ€. Because this is the only project of the year that was selected for the first prize of the award.
“High-efficiency GaN-based blue light-emitting diodes on silicon substrates†was declared by Jiangxi Province. The main participants of the project include Professor Jiang Fengyi from Nanchang University and Sun Qian from Jingneng Optoelectronics (Jiangxi) Co., Ltd.
According to the project data, the project is the first to overcome the silicon-related problems. The LED indicators of the silicon substrate produced are in the international leading position in the same research, and are level with the two technical routes of silicon carbide and sapphire; Processing, epitaxial growth, chip manufacturing, device packaging and other four aspects have invented a key core technology suitable for silicon substrate high-efficiency blue-light LED production , self-contained system; this technology has applied for or has 232 international and domestic patents, of which authorized 127 invention patents have realized patent protection for each layer of the core components of the epitaxial chip.
According to reports, the first-class award for national technical inventions is: a major technological invention or innovation pioneered at home and abroad. The technical and economic indicators have reached the leading level of similar technologies, and promoted technological advances in related fields and have produced significant economic or social benefits.
"Si substrate technology should indeed win this award. He broke the technological monopoly of Japanese and American companies in this field. This is the embodiment of the country's strong support for technological inventions." An industrial economist close to the top of the State Council commented.
The led chip substrate mainly has three technical routes: a silicon carbide substrate, a sapphire substrate, and a silicon substrate. Among them, the former is the "noble route", the cost is high, and its substrate and LED preparation technology is monopolized by American companies. The sapphire substrate technology is mainly in the hands of Japanese companies, and the cost is low. This is the mainstream route on the market. However, the sapphire wafer has poor heat dissipation, and it is difficult to make the vertical growth of the crystal difficult to make a device with a large size and a vertical structure. The substrate is also more difficult to peel off. The third route is the silicon substrate technology developed by China itself, which makes up for the shortcomings of the first two technical routes.
"The inventor of sapphire technology won the 2014 Nobel Prize in Physics. From this perspective, silicon substrate technology is highly likely to win the first prize of China's national technology invention."
The above-mentioned insiders said that the major innovation significance of the silicon substrate project is that the silicon-based GaN technology is a technological route independently developed by China and possessing completely independent intellectual property rights. It will build China's LED industry standards and highlight the advantages of the industry. Technology will also receive strong support and promotion from the country, which is expected to have a revolutionary impact on China's LED industry.
Sun Qian said that from the national strategic level, silicon-based GaN technology is a technological route with independent intellectual property rights in China, which can build China's completely independent LED industry; at the industrial level, silicon-based materials are cheap and easy to obtain, The advantages of silicon-based GaN technology, using mature integrated circuit capacity, can drive down the cost of the entire industry chain from equipment to chips and packaging. "Silicon-based GaN technology should be further supported and supported by relevant national policies, which will have a huge impact on the entire LED industry chain. We are very much looking forward to the implementation of these policies." Sun Qian said. A shares of Lianchuang Optoelectronics , Shell, and other listed companies, involving LED-related business.
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